Breakthrough in Quantum Electronics: Controlling Electrical Flow at Atomic Scale

Researchers at the University of California, Riverside (UCR) have made a significant advancement in the field of electronics by discovering a method to manipulate electrical flow through crystalline silicon at the atomic level. This groundbreaking study, published on July 8, 2025, in the Journal of the American Chemical Society, could pave the way for the development of smaller, faster, and more efficient electronic devices by utilizing quantum electron behavior.

The study, led by Professor Tim Su of the UCR Department of Chemistry, reveals that electrons can move through silicon like waves, rather than particles. It highlights the potential for utilizing the symmetrical structure of silicon molecules to either create or suppress a phenomenon known as destructive interference. This effect allows researchers to effectively turn conductivity “on” or “off,” functioning akin to a molecular-scale switch. "We found that when tiny silicon structures are shaped with high symmetry, they can cancel out electron flow like noise-canceling headphones," said Su.

This research arrives at a critical juncture for the technology industry, which has largely relied on traditional methods of manufacturing silicon chips. These methods involve carving tiny circuits into silicon wafers or doping, which entails adding small quantities of other elements to modulate the electrical properties of silicon. However, as devices continue to shrink, these conventional techniques are nearing their physical limits. The ability to carve smaller circuits diminishes, and added atoms cannot sufficiently mitigate issues arising from quantum effects, such as unintended electron leakage across insulating barriers.

In contrast, Su and his team employed a novel “bottom-up” approach, constructing silicon molecules atom by atom rather than reducing existing silicon structures. This methodology provides precise control over the arrangement of atoms and, crucially, the manner in which electrons traverse their silicon constructs. Experimental results showed distinct conducting and insulating states based on the configuration of electrodes, indicating a successful manipulation of electron flow.

Silicon, the second most abundant element in Earth’s crust, serves as the foundational material for modern computing technology. As devices become increasingly miniaturized, the unpredictable nature of quantum effects complicates traditional designs. The findings from UCR suggest that engineers may need to embrace these quantum behaviors rather than resist them. "Our work shows how molecular symmetry in silicon leads to interference effects that control how electrons move through it," Su explained. "And we can switch that interference on or off by managing the alignment of our electrodes."

This research is among the first to demonstrate quantum interference effects in three-dimensional, diamond-like silicon, which is consistent with the structures commonly used in commercial chips. Beyond the implications for ultra-small switches, the findings may also contribute to the development of thermoelectric devices capable of converting waste heat into electricity and advancing quantum computing technologies utilizing familiar materials.

In conclusion, this advancement signifies not merely a minor adjustment in existing technology but a fundamental reevaluation of the capabilities of silicon. As Tim Su aptly stated, "This gives us a fundamentally new way to think about switching and charge transport. It’s not just a tweak. It’s a rethink of what silicon can do." The implications of this research could influence numerous sectors, from consumer electronics to renewable energy, marking a pivotal moment in the evolution of electronic devices.