Novel Technique Restores Magnetism in Thin Film Memory Devices

A groundbreaking research initiative led by the University of Osaka has unveiled a novel processing technique capable of reversing the degradation of magnetization in next-generation memory devices. This technique, which focuses on the manipulation of magnetic properties in materials, is particularly significant as it addresses a critical challenge faced by modern low-power solutions in computer memory systems.

The study, published in the journal *Applied Physics Letters* on July 16, 2025, highlights the work of Tomohiro Koyama, the lead author and a researcher at SANKEN, the Research Institute of Electrical Communication at the University of Osaka. According to Koyama, the innovative method could enhance the robustness of semiconductor memory by recovering magnetization in spintronics devices that typically suffer from degradation due to manufacturing processes.

Spintronics, a technology that leverages the spin and charge of electrons for memory processing and storage, relies on the precise behavior of thin films under magnetic fields. The production of these thin films often involves sputtering, which can lead to oxidation of the magnetic layers, adversely affecting their magnetic properties. Koyama explained that the research team focused on a Co/MgO structure, utilizing platinum (Pt) or gold (Au) underlayers to explore their effects on magnetization recovery.

The study found that adjusting the sputtering power during the deposition of the MgO layer allowed the team to mitigate oxidation damage to the cobalt (Co) layer. Following this adjustment, they performed annealing using molecular hydrogen (H2), leading to observable changes in the magnetic properties of the material. The results indicated that the sample treated with Pt exhibited significant recovery of magnetization, as evidenced by the characteristic hysteresis curve associated with magnetic materials. In contrast, the sample with an Au underlayer showed no improvement in magnetization.

"The strong catalytic action of Pt is fundamental in allowing the recovery of the magnetic properties of Co after oxidation and could help us to inform the design of future post-silicon devices," stated Koyama, emphasizing the potential impact of this research on the future of memory technology.

The implications of this study extend beyond academic interest, as the recovery of magnetization in thin films could pave the way for more reliable and efficient memory devices. The ability to restore magnetization not only enhances device performance but also contributes to the development of non-volatile and low-power memory solutions, crucial for advancing modern computing technology.

This research aligns with broader trends in semiconductor technology, where the demand for more efficient memory systems continues to rise. The techniques developed by Koyama and his team could serve as a foundational approach for overcoming challenges associated with the degradation of magnetic properties in thin films, ultimately influencing the design and functionality of future memory devices. As the field progresses, further exploration of catalytic effects on magnetization could yield additional breakthroughs, reinforcing the importance of innovative research in the realm of advanced materials and technologies.